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NXP RF Power LDMOS Transistor MRFE6VP61K25H 1.8-600MHz 1250W Geniune 22312
NXP RF Power LDMOS Transistor MRFE6VP61K25H 1.8-600MHz 1250W Geniune 22312
NXP RF Power LDMOS Transistor MRFE6VP61K25H 1.8-600MHz 1250W Geniune 22312
NXP RF Power LDMOS Transistor MRFE6VP61K25H 1.8-600MHz 1250W Geniune 22312
NXP RF Power LDMOS Transistor MRFE6VP61K25H 1.8-600MHz 1250W Geniune 22312
NXP RF Power LDMOS Transistor MRFE6VP61K25H 1.8-600MHz 1250W Geniune 22312

NXP RF Power LDMOS Transistor MRFE6VP61K25H 1.8-600MHz 1250W Geniune 22312

$ 47.52

Availability: 99 in stock
  • Refund will be given as: Money Back
  • Item must be returned within: 30 Days
  • Transistor Category: Power Transistor
  • Restocking Fee: No
  • Condition: New
  • All returns accepted: Returns Accepted
  • Return shipping will be paid by: Buyer
  • Brand: NXP
  • Maximum Power Dissipation: 8 W

    Description

    NXP RF Power LDMOS Transistor MRFE6VP61K25HR6 1.8-600MHz 1250W Geniune
    anufacturer:     NXP
    Product Category:     RF MOSFET Transistors
    RoHS:     Details
    Transistor Polarity:     N-Channel
    Technology:     Si
    Id - Continuous Drain Current:     10 uA
    Vds - Drain-Source Breakdown Voltage:     133 V
    Operating Frequency:     1.8 MHz, 600 MHz
    Gain:     24 dB
    Output Power:     1.25 kW
    Maximum Operating Temperature:     + 150 C
    Mounting Style:     SMD/SMT
    Package/Case:     NI-1230
    Packaging:     Cut Tape
    Packaging:     MouseReel
    Packaging:     Reel
    Configuration:     Single
    Series:     MRFE6VP61K25H
    Type:     RF Power MOSFET
    Brand:     NXP Semiconductors
    Pd - Power Dissipation:     1.333 kW
    Product Type:     RF MOSFET Transistors
    Factory Pack Quantity:     150
    Subcategory:     MOSFETs
    Vgs - Gate-Source Voltage:     10 V
    Vgs th - Gate-Source Threshold Voltage:     2.2 V
    Unit Weight:     13,155 g