P416B ◊☆ 100pcs ☆ Ge Transistor PNP (П416Б~2SA279 /2N384) 12V Hfe 90/250, BOX

Description

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BOX ORIGINAL
◊-military check.
Тип
Биполярный транзистор
Материал
Ge
Структура
pnp
Pc,max
100mW
Ucb,max
12V
Uce,max
12V
Ueb,max
3V
Ic,max
25mA
Tj,max
75єC
Ft,max
80MHz
Cctip,pF
8
Hfe
90/250
Производитель
RUSSIA
Caps
Применение
Low Power, High Frequency
Аналоги:
2N384
;
2N384-33
;
Transistors П416, П416А, П416Б germanium alloy p-n-p universal.
Designed for use in amplifier and generator stages in the range of long to short and ultra-short waves, as well as in pulse stages of electronic devices.
They are produced in a metal-glass housing with flexible leads.
The type designation is given on the side surface of the housing.
Emitter lead on housing shoulder is marked with colored dot.
The mass of the transistor is not more than 2.2 g.
The main technical characteristics of transistor П416Б:
• Transistor structure: p-n-p
• Pc max - Constant dissipated collector power: 100 mW;
• Pk t max - Constant dissipated collector power with heat sink: 360 mW;
• Frg - Limit frequency of transistor current transfer coefficient for circuits with common emitter and common base: not less than 80 MHz;
• Ubb of samples - Collector-base punching voltage at specified reverse current of collector and open emitter circuit: 15 V;
• Uebo of samples - Punching voltage emitter-base at specified reverse current of emitter and open circuit of collector: 3 V;
• Ic max - Maximum permissible direct collector current: 25 mA;
• Ikbo - Collector return current - current through collector junction at specified collector-base reverse voltage and open emitter output: not more than 5 μA;
• H21e - Static current transfer coefficient of transistor in small signal mode for circuits with common emitter: 90... 200;
• Sk - Collector junction capacity: not more than 8 pF;
• Rce us - Saturation resistance between collector and emitter: not more than 40 ohms